Materialy Elektronnoi Tekhniki
| MATERIALS SCIENCE AND TECHNOLOGY. SEMICONDUCTORS | |
| Название | The elastic and viscoelastic behavior of ceramics on the base of the SiC−AlN solid solutions |
| Авторы | G. K. Safaraliev, Sh. Sh. Shabanov, B. A. Bilalov, G. D. Kardashova, E. G. Pashuk, Sh. A. Halilov, R. R. Akhmedov |
| Информация об авторах | Daghestan State University G. K. Safaraliev, Sh. Sh. Shabanov, B. A. Bilalov, G. D. Kardashova, E. G. Pashuk, Sh. A. Halilov, R. R. Akhmedov |
| MATERIALS SCIENCE AND TECHNOLOGY. DIELECTRICS | |
| Название | Analysis of lithium iodate formation specificity during growth on plane seed |
| Авторы | O. G. Portnov, D. G. Harlamov |
| Информация об авторах | National Research University «MISiS» O. G. Portnov, D. G. Harlamov |
| Название | The spreading of the polarization of the ferroelectric granules in the electrically insulated lithium niobate foiles |
| Авторы | R. N. Zhukov, D. A. Kiselev, M. D. Malinkovich, Yu. N. Parkhomenko, E. A. Vygovskaya, O. V. Toropova |
| Информация об авторах | FSAEI of Higher Professional Education National University of Science and Technology MISiS R. N. Zhukov, D. A. Kiselev, M. D. Malinkovich, Yu. N. Parkhomenko, E. A. Vygovskaya, O. V. Toropova |
| MODELING OF PROCESSES AND MATERIALS | |
| Название | Silicon single crystal growth from double crucible on «Redmet–90M» pulling |
| Авторы | N. A. Verezub, A. I. Prostomolotov |
| Информация об авторах | A. Ishlinsky Institute for Problems in Mechanics of RAS N. A. Verezub, A. I. Prostomolotov |
| Название | Influence of the form of crucible bottom on conjugate convective heat exchange in bridgman method |
| Авторы | P. V. Antonov, V. S. Berdnikov |
| Информация об авторах | Institute of Thermal Physics SB RAS P. V. Antonov and V. S. Berdnikov |
| EPITAXIAL LAYERS AND MULTILAYERED COMPOSITIONS | |
| Название | Detection method of silicon–sapphare interface state in silicon on sapphire thin layers |
| Авторы | S. V. Tikhov, D. A. Pavlov, N. O. Krivulin |
| Информация об авторах | University of Nizhniy Novgorod S. V. Tikhov, D. A. Pavlov, N. O. Krivulin |
| Название | Ion implantation into the p–CdxHg1–xTe heteroepytaxial layers and crystals |
| Авторы | A. V. Voitsekhovskii, N. Kh. Talipov |
| Информация об авторах | Tomsk State University A. V. Voitsekhovskii
Peter the Great Academy of the Strategic Missile Force N. Kh. Talipov |
| NANOMATERIALS AND NANOTECHNOLOGY | |
| Название | Sige quantum rings on Si (100) surface |
| Авторы | P. A. Kuchinskaya, V. A. Zinovyev, A. V. Nenashev, V. A. Armbrister, V. A. Volodin, A. V. Dvurechenskii |
| Информация об авторах | A. V. Rzhanov Institute of Semiconductor Physics Siberian branch of the RAS P. A. Kuchinskaya, V. A. Zinovyev, V. A. Armbrister
A. V. Rzhanov Institute of Semiconductor Physics Siberian branch of the RAS, Novosibirsk state university A. V. Nenashev, V. A. Volodin, A. V. Dvurechenskii |
| Название | Optimization of technological regimes of formation of gas–sensing nanocomposite material based on polyacrylonitrile by method of neural network modeling |
| Авторы | Lu Ping, T. V. Semenistaya, K. A. Aghabekyan, N. K. Plugotarenko, A. N. Korolev |
| Информация об авторах | Technological institute of southern Federal university in g. Taganrog Lu Ping, T. V. Semenistaya, K. A. Aghabekyan, N. K. Plugotarenko, A. N. Korolev |
| Название | The properties of silicon nanoparticles prepared by silane decomposition in microwave plasma |
| Авторы | Yu. N. Parkhomenko, A. A. Polisan, E. A. Skryleva, N. Yu. Tabachkova, N. Yu. Shulga, A. M. Davydov, I. A. Kossyi, I.N. Dyuzhikov, V. I. Pokalyakin |
| Информация об авторах | National Research University «MISiS» Yu. N. Parkhomenko, A. A. Polisan, E. A. Skryleva, N. Yu. Tabachkova, N. Yu. Shulga
Prokhorov General Physics Institute of RAS A. M. Davydov, I. A. Kossyi
I. N. Dyuzhikov, V. I. Pokalyakin |
| PHYSICAL CHARACTERISTICS AND THEIR STUDY | |
| Название | Study of the regularities of formation and mechanisms of influence of structure on the properties of tem based on Bi and Sb chalcogenides, obtained by the vertical directed crystallization |
| Автор | K. V. Gochua |
| Информация об авторе | National Research University «MISiS» K. V. Gochua |
| Название | Study of the regularities of formation and mechanisms of influence of structure on the properties of tem based on Bi and Sb chalcogenides, obtained by the extrusion |
| Автор | K. V. Gochua |
| Информация об авторе | National Research University «MISiS» K. V. Gochua |
