Materialy Elektronnoi Tekhniki
| MATERIALS SCIENCE AND TECHNOLOGY. SEMICONDUCTORS | |
| ArticleName | The elastic and viscoelastic behavior of ceramics on the base of the SiC−AlN solid solutions |
| ArticleAuthors | G. K. Safaraliev, Sh. Sh. Shabanov, B. A. Bilalov, G. D. Kardashova, E. G. Pashuk, Sh. A. Halilov, R. R. Akhmedov |
| ArticleAuthorsData | Daghestan State University G. K. Safaraliev, Sh. Sh. Shabanov, B. A. Bilalov, G. D. Kardashova, E. G. Pashuk, Sh. A. Halilov, R. R. Akhmedov |
| MATERIALS SCIENCE AND TECHNOLOGY. DIELECTRICS | |
| ArticleName | Analysis of lithium iodate formation specificity during growth on plane seed |
| ArticleAuthors | O. G. Portnov, D. G. Harlamov |
| ArticleAuthorsData | National Research University «MISiS» O. G. Portnov, D. G. Harlamov |
| ArticleName | The spreading of the polarization of the ferroelectric granules in the electrically insulated lithium niobate foiles |
| ArticleAuthors | R. N. Zhukov, D. A. Kiselev, M. D. Malinkovich, Yu. N. Parkhomenko, E. A. Vygovskaya, O. V. Toropova |
| ArticleAuthorsData | FSAEI of Higher Professional Education National University of Science and Technology MISiS R. N. Zhukov, D. A. Kiselev, M. D. Malinkovich, Yu. N. Parkhomenko, E. A. Vygovskaya, O. V. Toropova |
| MODELING OF PROCESSES AND MATERIALS | |
| ArticleName | Silicon single crystal growth from double crucible on «Redmet–90M» pulling |
| ArticleAuthors | N. A. Verezub, A. I. Prostomolotov |
| ArticleAuthorsData | A. Ishlinsky Institute for Problems in Mechanics of RAS N. A. Verezub, A. I. Prostomolotov |
| ArticleName | Influence of the form of crucible bottom on conjugate convective heat exchange in bridgman method |
| ArticleAuthors | P. V. Antonov, V. S. Berdnikov |
| ArticleAuthorsData | Institute of Thermal Physics SB RAS P. V. Antonov and V. S. Berdnikov |
| EPITAXIAL LAYERS AND MULTILAYERED COMPOSITIONS | |
| ArticleName | Detection method of silicon–sapphare interface state in silicon on sapphire thin layers |
| ArticleAuthors | S. V. Tikhov, D. A. Pavlov, N. O. Krivulin |
| ArticleAuthorsData | University of Nizhniy Novgorod S. V. Tikhov, D. A. Pavlov, N. O. Krivulin |
| ArticleName | Ion implantation into the p–CdxHg1–xTe heteroepytaxial layers and crystals |
| ArticleAuthors | A. V. Voitsekhovskii, N. Kh. Talipov |
| ArticleAuthorsData | Tomsk State University A. V. Voitsekhovskii
Peter the Great Academy of the Strategic Missile Force N. Kh. Talipov |
| NANOMATERIALS AND NANOTECHNOLOGY | |
| ArticleName | Sige quantum rings on Si (100) surface |
| ArticleAuthors | P. A. Kuchinskaya, V. A. Zinovyev, A. V. Nenashev, V. A. Armbrister, V. A. Volodin, A. V. Dvurechenskii |
| ArticleAuthorsData | A. V. Rzhanov Institute of Semiconductor Physics Siberian branch of the RAS P. A. Kuchinskaya, V. A. Zinovyev, V. A. Armbrister
A. V. Rzhanov Institute of Semiconductor Physics Siberian branch of the RAS, Novosibirsk state university A. V. Nenashev, V. A. Volodin, A. V. Dvurechenskii |
| ArticleName | Optimization of technological regimes of formation of gas–sensing nanocomposite material based on polyacrylonitrile by method of neural network modeling |
| ArticleAuthors | Lu Ping, T. V. Semenistaya, K. A. Aghabekyan, N. K. Plugotarenko, A. N. Korolev |
| ArticleAuthorsData | Technological institute of southern Federal university in g. Taganrog Lu Ping, T. V. Semenistaya, K. A. Aghabekyan, N. K. Plugotarenko, A. N. Korolev |
| ArticleName | The properties of silicon nanoparticles prepared by silane decomposition in microwave plasma |
| ArticleAuthors | Yu. N. Parkhomenko, A. A. Polisan, E. A. Skryleva, N. Yu. Tabachkova, N. Yu. Shulga, A. M. Davydov, I. A. Kossyi, I.N. Dyuzhikov, V. I. Pokalyakin |
| ArticleAuthorsData | National Research University «MISiS» Yu. N. Parkhomenko, A. A. Polisan, E. A. Skryleva, N. Yu. Tabachkova, N. Yu. Shulga
Prokhorov General Physics Institute of RAS A. M. Davydov, I. A. Kossyi
I. N. Dyuzhikov, V. I. Pokalyakin |
| PHYSICAL CHARACTERISTICS AND THEIR STUDY | |
| ArticleName | Study of the regularities of formation and mechanisms of influence of structure on the properties of tem based on Bi and Sb chalcogenides, obtained by the vertical directed crystallization |
| ArticleAuthor | K. V. Gochua |
| ArticleAuthorData | National Research University «MISiS» K. V. Gochua |
| ArticleName | Study of the regularities of formation and mechanisms of influence of structure on the properties of tem based on Bi and Sb chalcogenides, obtained by the extrusion |
| ArticleAuthor | K. V. Gochua |
| ArticleAuthorData | National Research University «MISiS» K. V. Gochua |
