Journals →  Materialy Elektronnoi Tekhniki →  2010 →  #4

Materialy Elektronnoi Tekhniki



Materials science and technology. Semiconductors
ArticleName The peculiarities of internal getter formation in nitrogen doped dislocation free silicon wafers
ArticleAuthors М. V. Mezhennyi, М. G. Milvidskii, V. Ya. Resnick
ArticleAuthorsData M. V. Mezhennyi, M. G. Milvidskii, OAO «Giredmet»; V. Ya. Resnick, Insitute for Chemical Problems of Microelectronics
ArticleName Use of silicon tetrachloride hydrogenation techniques in polycrystalline silicon production
ArticleAuthors V. M. Ivanov, Yu. V. Trubitsin
ArticleAuthorsData V. M. Ivanov and Yu. V. Trubitsin, Classical Private University, Ukraine
Materials science and technology. Dielectrics
ArticleName Technological form single crystals growth from aqueous solution for nonlinear optic devices
ArticleAuthor O. G. Portnov
ArticleAuthorData O. G. Portnov, National Research University «MISiS»
Materials science and technology. Magnetic materials
ArticleName Effect of microstructure on properties of radio-absorbing nickel-zinc ferrites
ArticleAuthors V. G. Kostishin, R. M. Vergazov, V. G. Andreev, S. B. Bibikov, S. V. Podgornaya, A. T. Morchenko
ArticleAuthorsData V. G. Kostishin, National Research University «MISiS»; R. M. Vergazov, V. G. Andreev, The Kuznetsk Institute of information and control technology (branch of Penza state university); S. B. Bibikov, Institute of Biochemical Physics of RAS; S. V. Podgornaya, A. T. Morchenko, National Research University «MISiS».
Modeling of processes and materials
ArticleName Thermal optimization of silicon single crystal growth on «Redmet-90M» puller
ArticleAuthors N. A. Verezub, A. I. Prostomolotov
ArticleAuthorsData N. A. Verezub, A. I. Prostomolotov, A. Ishlinsky Institute for Problems in Mechanics of RAS
ArticleName Theoretical calculation of vibrational and rotational modes in organic semiconductors based on metal-free phthalocyanine molecules
ArticleAuthors I. A. Belogorokhov, E. V. Tikhonov, A. A. Dobrovolskii, A. V. Galeeva, A. I. Artamkin, D. E. Dolzhenko, L. I. Ryabova, D. R. Khokhlov
ArticleAuthorsData I. A. Belogorokhov, OAO «Giredmet», E. V. Tikhonov, A. A. Dobrovolskii, A. V. Galeeva, A. I. Artamkin, D. E. Dolzhenko, L. I. Ryabova, D. R. Khokhlov, M .V .Lomonosov Moscow State University.
Nanomaterials and nanotechnology
ArticleName Phase composition study of nanocomposite SiO2CuOx, materials by x-ray absorption spectroscopy and photoelectron spectroscopy methods
ArticleAuthors G. E. Yalovega, V. A. Shmatko, T. N. Nazarova, V. V. Petrov, O. V. Zabluda
ArticleAuthorsData G. E. Yalovega, V. A. Shmatko, T. N. Nazarova, V. V. Petrov , O. V. Zabluda, Southern Federal University
ArticleName Hydrogen sorption by carbon nanomaterials
ArticleAuthors A. V. Timonina, D. N. Borisenko, V. V. Kveder, N. N. Kolesnikov, S. K. Brantov
ArticleAuthorsData A. V. Timonina, D. N. Borisenko, V. V. Kveder, N. N. Kolesnikov, S. K. Brantov, ISSP Rus. Acad. Sci.
Epitaxial layers and multilayered compositions
ArticleName Effect of molecular beam epitaxy conditions on the structure and properties of silicon on sapphire layers
ArticleAuthors D. A. Pavlov, P. A. Shilyaev, E. V. Korotkov, N. O. Krivulin, A. V. Nezhdanov, S. M. Plankina, E. A. Pitirimova, M. V. Romashova
ArticleAuthorsData D. A. Pavlov, P. A. Shilyaev, E. V. Korotkov, N. O. Krivulin, A. V. Nezhdanov, S. M. Plankina, E. A. Pitirimova, M. V. Romashova, University of Nizhniy Novgorod
Atomic structures and methods of structural investigations
ArticleName Effect of thermal neutron irradiation on the decomposition of oxygen solid solution in silicon
ArticleAuthors K. N. Enisherlova, V. T. Bublik, K. D. Scherbachev, M. I. Voronova, E.M. Temper
ArticleAuthorsData K. N. Enisherlova, National Research University «MISiS»; V. T. Bublik, K. D. Scherbachev, M. I. Voronova, FGUP NPP Pulsar; E.M. Temper, National Research University «MISiS»
ArticleName Study of the structural evolution of Si damaged layer after implantation with 64Zn+ ions and subsequent annealing
ArticleAuthors K. D. Shcherbachev, V. V. Privezentsev, V. V. Saraikin, D. A. Podgornyy
ArticleAuthorsData K. D. Shcherbachev, National Research University «MISiS»; V. V. Privezentsev, Institute of Physics & Technology, Russian Academy of Sciences; V. V. Saraikin, Research Institute of Physical Problems; D. A. Podgornyy, National Research University «MISiS».
Other questions
ArticleName The program complex for analysis and calculation of grown-in microdefects formation in dislocation-free silicon single crystals
ArticleAuthors V. I. Talanin, I. E. Talanin, N. Ph. Ustimenko
ArticleAuthorsData V. I. Talanin, I. E. Talanin, N. Ph. Ustimenko, Classic Private University, Ukraine
Journals →  Materialy Elektronnoi Tekhniki →  2010 →  #4