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PHYSICAL CHARACTERISTICS AND THEIR STUDY
ArticleName Conductivity of vanadium, cobalt and niobium doped titania layers
ArticleAuthor L. A. Balagurov, I. V. Kulermanov, A. F. Orlov, E. A. Petrova
ArticleAuthorData L. A. Balagurov, I. V. Kulermanov, A. F. Orlov, E. A. Petrova, OAO Giredmet.
Abstract
Special attention to the electric properties of titania is caused by its recent use for the manufacturing of various electronic devices. The temperature dependence of direct and alternating current conductivity of titania layers doped with vanadium, and also simultaneously by cobalt and niobium have been investigated. The layers were prepared by RF magnetron deposition in oxygen and argon atmospheres at a temperature of 550 °C and 2·10−2 Torr vacuum with a deposition velocity of 0.07 nm/s. We found that vanadium doped samples have conductivity dependencies typical of variable range hopping. The density of the localized states at the Fermi level was estimated. On the contrary, the conductivity of cobalt and niobium doped layers is caused by the tunnel conductivity with the thermal activation of the carriers between clusters, apparently cobalt ones. Thus, measurement of electrical resistance as a function of temperature is a fast and reliable technique for cluster detection in a material.
keywords Titania, vanadium, niobium, HF magnetron deposition, conductivity.
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