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Magnesium, titanium, rare metals, semiconductors
ArticleName Thermolectric materials based on the layered tetradymite-like chalcogenides
ArticleAuthor Zemskov V. S., Shelimova L. E., Konstantinov P. P., Avilov E. S., Kretova M. A.
ArticleAuthorData V. S. Zemskov, Chief Researcher; L. E. Shelimova, Leading Researcher, e-mail: shelimov@imet.ac.ru; E. S. Avilov, Senior Researcher; M. A. Kretova, Senior Researcher, The Baykov Institute of Metallurgy and Material Science of the Russian Academy of Sciences; P. P. Konstantinov, Senior Researcher, Ioffe Physical Technical Institute.
Abstract
The single crystals of PbSb2Te4 (p-type) and PbBi4Te7 (n-type) layered compounds doped with the electroactive impurities (Cd, Ag, Cu) were grown by the Czochralski technique with replenishment of the melt from liquid phase through a floating crucible. Seebeck coefficient, electrical and thermal conductivity have been measured in the 85–350 K temperature range in two crystallographic directions: parallel (across the layers) and perpendicular (along the cleavage planes) to trigonal c axis. Measurements of the Hall effect in the same directions have been performed in the 77–450 K temperature range. Significant anisotropy of the measured kinetic coefficients has been discovered. Analysis of the mechanism of the electroactive impurities incorporation into the ternary compounds crystal lattices has been made. The X-ray diffraction has showed that the most probable mechanism of the ternary compounds doping with the 1B subgroup of the Periodic System elements is the impurities incorporation into the van der Waals gaps between the layered packets.
keywords Thermoelectric materials, layered chalcogenides, doping with Cu, Cd, Ag, ternary compounds, crystal structure, thermoelectric properties, van der Waals gaps.
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