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Journals →  Materialy Elektronnoi Tekhniki →  2010 →  #4 →  Back

Modeling of processes and materials
ArticleName Thermal optimization of silicon single crystal growth on «Redmet-90M» puller
ArticleAuthor N. A. Verezub, A. I. Prostomolotov
ArticleAuthorData N. A. Verezub, A. I. Prostomolotov, A. Ishlinsky Institute for Problems in Mechanics of RAS
Abstract
In this article, we consider a number of questions relating to the thermal optimization of 200 mm diameter Si Czochralski single crystal growth process using the new «Redmet-90M» puller. The article includes results of numerical heat transfer simulation taking into account special thermal shield assemblies (with and without water cooling). The effect of various crucible rotation speed on the distribution of the azimuthal velocity of the melt and on the liquid-solid interface have also been investigated.
keywords Single crystal silicon growth, optimization, Czochralski method, Redmet-90M puller.
References
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