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Materials science and technology. Semiconductors
ArticleName The peculiarities of internal getter formation in nitrogen doped dislocation free silicon wafers
ArticleAuthor М. V. Mezhennyi, М. G. Milvidskii, V. Ya. Resnick
ArticleAuthorData M. V. Mezhennyi, M. G. Milvidskii, OAO «Giredmet»; V. Ya. Resnick, Insitute for Chemical Problems of Microelectronics
Abstract
The peculiarities of defect generation in nitrogen doped dislocation-free silicon wafers during multistage internal gettering treatment inclusive rapid thermal annealing (RTA) have been studied by optical microscopy and transmission electron microscopy methods. Silicon wafers 200 mm in diameter with <100> orientation, p-type of conductivity, a 10—12 Ohm ⋅ cm resistivity and a nitrogen content of [N] = 1,6 ⋅ 1014 сm-3 and oxygen content of [Oi] = (6—7) × 1017 сm-3 have been studied. It is shown that the use of standard RTA conditions (1250 °С/20 sec. in Ar ambient) allows one to generate necessary defect medium in the wafer bulk during the subsequent precipitation heat treatments but does not provide for the formation of a thick enough defect-free near-surface layer. Generating a defect-free near-surface layer of necessary thickness in the wafers was achieved by the introduction of additional preliminary RTA stage in oxygen ambient into the standard multistage heat treatment diagram. Analysis of possible reasons of the observable phenomena is given.
keywords Free dislocation silicon, microscopy, rapid thermal annealing, getter, heat treatment.
References

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