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| Epitaxial layers and multilayered compositions | |
| ArticleName | Pb1-xSnxTe Epitaxial Layers for Terahertz Radiation Detectors |
| ArticleAuthor | A. I. Belogorokhov, A. A. Konovalov and Yu.N. Parkhomenko |
| ArticleAuthorData | A. I. Belogorokhov, A. A. Konovalov and Yu.N. Parkhomenko, (OAO Giredmet) |
| Abstract | Undoped and indium doped Pb0,8Sn0,2Te epitaxial layers have been synthesized by liquid phase epitaxy. Depth profiles of free carriers and indium in the epitaxial layer have been studied. We have found that a uniform concentration region can be provided at depths of down to 15 um, and the conductivity type of the epitaxial layer at 77.3 K can be changed by varying indium concentration. We show that liquid phase epitaxy is more suitable for the reproducible synthesis of epitaxial layer with a preset free carrier concentration, including for terahertz range detectors. |
| keywords | Semiconductor, lead/tin telluride, liquid phase epitaxy, free carrier concentration, indium depth profile. |
| References | 1. Hohlov, D. R. Vysokochuvstvitel'nye priemniki teragercovogo izluchenija na osnove novogo klassa poluprovodnikovyh materialov / D. R. Hohlov // UFN. - 2006. - Vol. 176, N 9. - P. 983—987. 2. Galeeva, A. N. Fotoprovodimost' uzkowelevyh poluprovodnikov Pb1-xSnxTe(In) v teragercovoj spektral'noj oblasti / A. N. Galeeva, L. I. Rjabova, A. V. Nikorich, S. D. Ganichev, S. N. Danilov, V. V. Bel'kov, D. R. Hohlov // Pis'ma v ZhJeTF. - 2010. - Vol. 91, Issue 1. - P. 37—39. |
| Language of full-text | russian |
| Full content | Buy |
