National University of Science and Technology MISiS, Moscow, Russia:

D. E. Amelina, Post-Graduate Student of a Chair “Physical chemistry”, e-mail: darya.popova.11@mail.ru
M. V. Astakhov, Professor, Head of a Chair “Physical chemistry”
S. A. Butyrina, Student of a Chair “Physical chemistry”
S. V. Stakhanova, Assistant Professor

Thanks to intensive experimental research, a significant progress has been made in film coating technology in the recent years. The production of highquality thin films, especially the films with a thickness of several nanometers, is required to produce devices of various complexities. All methods for applying of film coatings are characterized by parameters such as the rate of film production and their thickness. Different methods for applying of films are used depending on morphology of the substrate and its relief. When it comes to the topic of development of microsystem technology in scientific literature, there are more and more reports about methods for depositing metallic and dielectric layers of nickel on semiconductor substrates such as silicon. While the production of nickel films on silicon’s surface by vacuum deposition methods is a well-mastered procedure, the production of thin-film coatings by the method of chemical deposition of films from organic solutions involves considerable difficulties. The experimental studies results regarding the structure of metallic nickel films on silicon substrates, first obtained by a combined method of manual deposition of thin layer of liquid solution and pyrolysis, were revealed. The optimal concentrations of a coating solution and its pyrolysis temperature were established. Based on the studies it was concluded that the method for deposition of nickel films — in order to obtain continuous metal coatings — is convenient for both smooth and relief substrates. The described method stands out due to the possibility of varying the metal film’s thickness, the coating solution preservation and a “manual” deposition control.
This work was carried out with the support of the Ministry of Education and Science of the Russian Federation according to the subsidiary agreement No.14.577.21.0123 (20.10.2014) (unique identifier of the applied scientific investigation RFMEFI57714X0123).

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