Voronezh State University:

V. A. Terekhov

I. E. Zanin

K. N. Pankov

D. E. Spirin

Physico–Technical Research Institute at the Lobachevsky State University of Nizhni Novgorod:

D. I. Tetelbaum
A. N. Mikhaylov
A. I. Belov

Lobachevsky State University of Nizhni Novgorod:

A. V. Ershov

The films have been deposited on the silicon subtracts with the (111) and (100) orientations by thermal evaporation of SiO powder and carbon implanted with doses of 6 · 10¹⁶ to 1,2 · 10¹⁷ cm⁻² followed by annealing in nitrogen at 1100 ^oC. Diffraction studies of these structures confirm the occurrence of a preferred orientation in the nanocrystals during high temperature thermal annealing, controlled by the substrate orientation. It was possible to detect the existence of two arrays of silicon nanocrystals in the dielectric matrix, with one having a smaller average size of 5—10 nm and a lattice parameter close to that of crystalline silicon, and the other one having a large size of 50—100 nm and a greater lattice parameter. We have estimated the carbon implantation doses for which the large size nanocrystals (> 50 nm) do not form. This dose is 6 · 10¹⁶ cm⁻² for the (111) substrates and 9 · 10¹⁶ cm⁻² for the (100) ones.

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