Federal State Budget Research Organization A.P. Vinogradov Institute of Geochemistry, Siberian Branch, Russian Academy of Sciences:

S. M. Pescherova

L. A. Pavlova

A. I. Nepomnyaschikh

I. A. Eliseev

Yu. V. Sokolnikova

Specific features of impurity distribution in multisilicon crystals grown from refined metallurgical silicon by the vertical Bridgman−Stockbarger method have been studied. The chemical composition of metallurgical silicon and multisilicon ingots grown under varying crystallization conditions have been analyzed by mass spectrometry with inductively coupled plasma (ICP−MS) and X−ray spectral electron probe microanalysis (RSMA). The size and distribution nature of microinclusions on the polished etched surfaces and chips of multisilicon crystals have been studied. We have revealed multicomponent microinclusions up to 100 micron in size in the multisilicon ingots grown at high crystallization speeds (1.5 cm/h) and low−component microinclusions one micron in size in the multisilicon ingots grown at a crystallization speed of from 0.5 to 1 cm/h.

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