V. Lashkarov Institute of Semiconductor Physics, the National Academy of Science of Ukraine:

E. F. Venger

L. A. Matveeva

P. L. Nelyuba

The electronic, optical and mechanical properties of heterosystems with Ge_1−xSi_x solid solution films on the GaAs (x = 0–0.04) and Si (x = 0.75) substrates have been studied. We used electroreflectance modulation spectroscopy for the films and the substrates, classical spectroscopy in the intrinsic absorption region of the films and mechanical stress measurements in the films and in the substrate. We show that the Ge_1−xSi_x films can change composition with the formation of other solid solution structures both during film deposition and under γ−irradiation. There is a possibility to reduce the mechanical stresses, to improve the electronic parameters of the films and the substrates at the interface, and to produce heterosystems without bending deformation.

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