Journals →  Materialy Elektronnoi Tekhniki →  2010 →  #1

Materialy Elektronnoi Tekhniki




MATERIALS SCIENCE AND TECHNOLOGY. SEMICONDUCTORS
ArticleName SIMULATION OF COALESCENCE OF PRIMARY GROWTH DEFECTS IN DISLOCATION-FREE SILICON SINGLE CRYSTALS
ArticleAuthors V.I. Talanin, I.E. Talanin, A.I. Mazurskii and M.L. Maksimchuk,
ArticleAuthorsData V.I. Talanin, I.E. Talanin, A.I. Mazurskii and M.L. Maksimchuk, Classical Private University, Ukraine
ArticleName EFFECT OF REACTANT INTRODUCTION PARAMETERS ON SILICON ROD TEMPERATURE IN SIEMENS PROCESS
ArticleAuthors V.A. Gavrilov, P.M. Gavrilov and P.P. Turchin
ArticleAuthorsData V.A. Gavrilov, P.M. Gavrilov, FGUP Mining and Chemical Factory, P.P. Turchin, FGOU VPO Siberian Federal university
MATERIALS SCIENCE AND TECHNOLOGY. DIELECTRICS
ArticleName EFFECT OF GROWTH CONDITIONS ON THE OPTICAL TRANSMISSION SPECTRA AND ELECTROPHYSICAL PROPERTIES OF LANTHANUM– GALLIUM SILICATE FAMILY CRYSTALS
ArticleAuthors O.A. Buzanov, N.S. Kozlova, E.V. Zabelina, A.P. Kozlova and N.A. Siminel
ArticleAuthorsData O.A. Buzanov, OAO Fomos Materials; N.S. Kozlova, E.V. Zabelina, A.P. Kozlova and N.A. Siminel, (Federal State Educational Institution for Higher Professional Education ‘National University of Science and Technology “MISiS”’)
ArticleName PARAMETERS OF ACTIVATION PROCESSES IN DIAMOND, SILICON AND GERMANIUM
ArticleAuthor M.N. Magomedov
ArticleAuthorData M.N. Magomedov, Institute for Geothermal Problems, Dagestan Research Center, Russian Academy of Sciences
MODELING OF PROCESSES AND MATERIALS
ArticleName CHOICE OF REACTOR CHAMBER FOR POLYCRYSTALLINE SILICON GROWTH
ArticleAuthors D.S. Brovin, A.A. Lovtsus and M.E. Rudinsky
ArticleAuthorsData D.S. Brovin, A.A. Lovtsus and M.E. Rudinsky, Soft–Impact Ltd, Saint–Petersburg State Polytechnical University
ArticleName SIMULATION OF AMORPHOUS AND CRYSTALLINE DIAMOND–LIKE FILM FORMATION PROCESSES
ArticleAuthors B. M. Sinelnikov, V. A. Tarala
ArticleAuthorsData B. M. Sinelnikov, V. A. Tarala, North–Caucasus State Technical University, South Scientific Center of the Russian Academy of Sciences, laboratory of Nanochemistry and Nanotechnology
NANOMATERIALS AND NANOTECHNOLOGY
ArticleName SURFACE STRUCTURE OF SILICON/CARBON MATRIX NANOCOMPOSITES AS REVEALED BY SCANNING PROBE MICROSCOPY
ArticleAuthors M.D. Malinkovich, Yu.N. Parkhomenko, D.S. Polyakov and M.L. Shupegin
ArticleAuthorsData M.D. Malinkovich, Yu.N. Parkhomenko, D.S. Polyakov and M.L. Shupegin, Federal State Educational Institution for Higher Professional Education ‘National University of Science and Technology “MISiS”’
ArticleName ESTIMATING ANALYSIS OF CONDITIONS FOR DEFECT–FREE QUANTUM DOTS FORMATION IN InxGa1–xAs/GaAs HETEROSTRUCTURES
ArticleAuthors R.Kh. Akchurin, N.T. Vagapova
ArticleAuthorsData R.Kh. Akchurin, N.T. Vagapova, Moscow State Academy of Fine Chemical Technology
PHYSICAL CHARACTERISTICS AND THEIR STUDY
ArticleName STRUCTURAL INVESTIGATIONS OF MULTICRYSTALLINE SILICON FOR SOLAR CELLS: GRAIN SIZE MEASUREMENT PROBLEM
ArticleAuthor A.V. Prykhodko
ArticleAuthorData A.V. Prykhodko, Zaporozhye National University
ArticleName HEAT–SENSITIVE PROPERTIES OF PbA0,5Nb0,5O3 (A = Fe, In, Co, Mn) FERROELECTRICS
ArticleAuthors V.N. Tsigankov, V.V. Safonov, E.V. Savinkina and I.A. Zamilatskov
ArticleAuthorsData V.N. Tsigankov, V.V. Safonov, E.V. Savinkina and I.A. Zamilatskov, M.V. Lomonosov Moscow State Academy of Fine Chemical Technology
ATOMIC STRUCTURES AND METHODS OF STRUCTURAL INVESTIGATIONS
ArticleName EFFECT OF GROWTH CONDITIONS OF Bi2Te2,7Se0,3 SOLID SOLUTIONS ON THE ANISOTROPY OF THEIR PHYSICAL PROPERTIES
ArticleAuthors V.T. Bublik, A.I. Voronin, E.A. Bygovskaya, V.F. Ponomarev, N.Yu. Tabachkova and O.V. Toropova
ArticleAuthorsData A.I. Voronin, V.F. Ponomarev, (Kristall Research and Production Company Ltd.); N.Yu. Tabachkova, V.T. Bublik, E.A. Bygovskaya and O.V. Toropova, (Federal State Educational Institution for Higher Professional Education ‘National University of Science and Technology “MISiS”’)
ArticleName FABRICATION OF SINGLE–CRYSTAL ORIENTED SUBMICRON STRUCTURES FROM BI AND Bi—Sb FILMS ON SiO2/Si SUBSTRATE
ArticleAuthors A.I. Il’in, A.V. Chernykh and C.V. Dubonos
ArticleAuthorsData A.I. Il’in, A.V. Chernykh and C.V. Dubonos, Institute of Microelectronics Technology & High Purity Materials, Russian Academy of Sciences
Journals →  Materialy Elektronnoi Tekhniki →  2010 →  #1