Materialy Elektronnoi Tekhniki
| MATERIALS SCIENCE AND TECHNOLOGY. SEMICONDUCTORS | |
| ArticleName | ZnTe Homogeneity Limits |
| ArticleAuthors | I. Kh. Avetissov, E. N. Mozhevitina, A. V. Khomykov, R. I. Avetissov, A. Yu. Zinovjev |
| ArticleAuthorsData | D. Mendeleyev University of Chemical Technology of Russia I. Kh. Avetissov, E. N. Mozhevitina, A. V. Khomykov, R. I. Avetissov, A. Yu. Zinovjev |
| MATERIALS SCIENCE AND TECHNOLOGY. DIELECTRICS | |
| ArticleName | The Certified Reference Materials of Organization for Optical Parameters Measurement of Single Crystals and Stocks on Their Base |
| ArticleAuthors | M. B. Bykova, Zh. A. Goreeva, I. S. Didenko, N. S. Kozlova, V. V. Sidorin |
| ArticleAuthorsData | National University of Science and Technology MISiS M. B. Bykova, Zh. A. Goreeva, I. S. Didenko, N. S. Kozlova
Moscow state technical university of radio engineering, electronics and automation V. V. Sidorin |
| MATERIALS SCIENCE AND TECHNOLOGY. MAGNETIC MATERIALS | |
| ArticleName | Research Opportunities Ferrite 2000NM the Short Process Flow |
| ArticleAuthors | V. G. Kostishin, I. I. Kaneva, V. G. Andreev, A. N. Nikolaev, E. I. Volkova |
| ArticleAuthorsData | University of Science and Technology MISiS V. G. Kostishin, I. I. Kaneva, V. G. Andreev, A. N. Nikolaev, E. I. Volkova |
| PHYSICAL CHARACTERISTICS AND THEIR STUDY | |
| ArticleName | X−ray Topographic Study of Defects in Si−based Multilayer Epitaxial Power Devices |
| ArticleAuthors | I. L. Shulpina, V. A. Kozlov |
| ArticleAuthorsData | Ioffe Physico–Technical Institute of Russian Academy of Sciences I. L. Shulpina
FID Technology Ltd., Power Semiconductors Ltd V. A. Kozlov |
| ArticleName | Application of in situ X–ray Reflectivity for Determining parameters of Nanoscale Silicon Films |
| ArticleAuthors | I. S. Smirnov, E. G. Novoselova, A. A. Egorov, I. S. Monakhov |
| ArticleAuthorsData | Moscow institute of electronics and mathematic, Higher School of Economics I. S. Smirnov, E. G. Novoselova, A. A. Egorov
Research Institute of Advanced Materials and Technologies I. S. Monakhov |
| EPITAXIAL LAYERS AND MULTILAYERED COMPOSITIONS | |
| ArticleName | Electro−physical and Photoelectrical Characteristics of MIS−structures Based on Hetero−epitaxial HgCdTe MBE with Non−uniform Distribution of Composition |
| ArticleAuthors | A. V. Voitsekhovskii, S. N. Nesmelov, S. M. Dzyadukh |
| ArticleAuthorsData | Detached structural subdivision «Siberian Physical–Technical Institute of Tomsk State University A. V. Voitsekhovskii, S. N. Nesmelov, S. M. Dzyadukh |
| ArticleName | Influence of Conditions of Growth on Structural Perfection of Layers of AlN Received by Method MOS−gidridnoy of an Epitaxy |
| ArticleAuthors | A. V. Mazalov, D. R. Sabitov, V. A. Kureshov, A. A. Padalitsa, A. A. Marmalyuk, R. Kh. Akchurin |
| ArticleAuthorsData | Sigm Plus Co. A. V. Mazalov, D. R. Sabitov, V. A. Kureshov, A. A. Padalitsa
Sigm Plus Co., Moscow State University of Fine Chemical Technologies
Moscow State University of Fine Chemical Technologies R. Kh. Akchurin |
| ArticleName | Prediction the Influence of Technological Parameters of Formation of Gas−sensing Materials Based on Polyacrylonitrile on Resistance |
| ArticleAuthors | S. P. Konovalenko, T. A. Bednaya, T. V. Semenistaya, A. N. Korolev |
| ArticleAuthorsData | Taganrog State Pedagogical Institute S. P. Konovalenko, T. A. Bednaya
Technological institute of Southern Federal university in g. Taganrog T. V. Semenistaya, A. N. Korolev |
| NANOMATERIALS AND NANOTECHNOLOGY | |
| ArticleName | Influence of Silicon Layer Properties on Capacitance Parameters of MIS/SOS−structures |
| ArticleAuthors | K. L. Enisherlova, V. G. Goriachev, E. M. Temper, S. A. Kapilin |
| ArticleAuthorsData | FSUE «S&PE «Pulsar» K. L. Enisherlova, V. G. Goriachev, E. M. Temper, S. A. Kapilin |
| ArticleName | Formation of Nanocomposites Ni/C Based of Polyacrylonitrile Under IR−radiation |
| ArticleAuthors | D. G. Muratov, E. V. Yakushko, L. V. Kozhitov, A. V. Popkova, M. A. Pushkarev |
| ArticleAuthorsData | A. V. Topchiev Institute of Petrochemical Synthesis, RAS D. G. Muratov, L. V. Kozhitov
University of Science and Technology MISiS E. V. Yakushko, A. V. Popkova, M. A. Pushkarev |
| ArticleName | Finely Divided Methylsilsesquioxane Particles with SiO4/2 — Fragments in Structure |
| ArticleAuthors | P. A. Averichkin, Y. B. Andrusov, I. A. Denisov, T. B. Klytchbaev, Y. N. Parkhomenko, N. A. Smirnova, |
| ArticleAuthorsData | Federal State Research and Design Institute of Rare Metal Industry P. A. Averichkin, Y. B. Andrusov, I. A. Denisov, Y. N. Parkhomenko, N. A. Smirnova
Chemical and Metallurgical Holding «Metal» T. B. Klytchbaev |
