MATERIALS SCIENCE AND TECHNOLOGY. SEMICONDUCTORS | |
Название | Investigation on the properties of large [100]−oriented InSb single crystals grown by czohralski method |
Автор | V. S. Ezhlov, A. G. Milvidskaya, E. V. Molodtsova, G. P. Kolchina, M. V. Mezhennyi, V. Ya. Resnick |
Информация об авторе | OAO Giredmet V. S. Ezhlov, A. G. Milvidskaya, E. V. Molodtsova, G. P. Kolchina
Insitute for Chemical Problems of Microelectronics M. V. Mezhennyi, V. Ya. Reznik |
Реферат | Investigation on the properties of large [100]−oriented InSb single crystals grown by Czoсhralski method The properties of undoped and heavily Te doped large single crystals of InSb grown by Czochralski method in the [100] direction and intended for use in IR photodetectors of new generation were studied. It was found that the non−uniformity in undoped crystals does not exceed 10—16%. The average dislocation density in this ingots was 7 ⋅ 101 cm−2 and their distribution along the diameter of (100)−oriented wafers was much more uniform than for the (211)−oriented wafers. We also studied the microstructure of heavily Te doped InSb crystals. It was established that the dislocation density in these crystals was below 1 ⋅ 102 cm−2. Te doping producing the electron concentration higher than 1,5 ⋅ 1018 cm−3 gave rise to the formation of high density of precipitates. The optical transmission of the samples with electron concentration ~6,9 ⋅ 1017 cm−3 was found to de higher 40 % for the wavelength range of 3—5 μm. |
Ключевые слова | Indium antimonide, monocrystal, Czochralski, defects, optical transmission, uniformity |
Библиографический список | 1. Grinchenko, L. Ya. Sovremennoe sostoyanie i perspektivy IK−fotoelektroniki / L. Ya. Grinchenko, V. P. Ponomarenko, A. M. Filachev // Prikladnaya fizika. − 2009. − № 2. − S. 57—62. |
Language of full-text | русский |
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