NANOMATERIALS AND NANOTECHNOLOGY | |
Название | The conductivity mechanism of silicon−carbon composites with nano−sized w particle in the temperature range 20—200 °С |
Автор | I. M. Anfimov, S. P. Kobeleva, M. D. Malinkovich, O. V. Toropova, Yu. N. Parkhomenko |
Информация об авторе | National Research University «MISiS» I. M. Anfimov, S. P. Kobeleva, M. D. Malinkovich, I. V. Shchemerov, O. V. Toropova, Yu. N. Parkhomenko |
Реферат | Temperature dependance of the resistivity of carbon−silicon 1 mkm film containing nanocise tungsten particles were investigated. Resistivity measurements were carried out by contact method in the temperature range 20—200 °С for films with resistivity at room temperature of about 0,03—15 Ohm ⋅ cm. Decreasing of the resistivity with temperature was observed. An activation and a tunnel mechanisms of conductivity were proposed. Tunnel fraction growths with tungsten content from 40 to 80% coincident with decrease of activation energy from 0,1 to 0,06 eV |
Ключевые слова | Silicon−carbon films, nanocomposite, conductivity, activation energy |
Библиографический список | 1. Abeles, B. Structural and electrical properties of granular metal films / B. Abeles, Ping Sheng, M. D. Coutts, Y. Arie // Adv. Phys. − 1975. − V. 24. − P. 407—461. |
Language of full-text | русский |
Полный текст статьи | Получить |