Journals →  Non-ferrous Metals →  2011 →  #1 →  Back

Materials science
ArticleName An influence of hydrogen glow discharge plasma treatment on structural properties of SnOx and SiC1.4 thin films
ArticleAuthor Beisenkhanov N. B.

N. B. Beisenkhanov, Leading Researcher e-mail:, Institute of Physics and Technology, Almaty.


In the paper, an influence of hydrogen glow discharge plasma treatment on structural properties of SiC1.4 and SnOx thin films is studied. A SiC1.4 layer is formed by multiple implantation of carbon ions with energies 40, 20, 10, 5 and 3 keV into silicon substrate. It was found that treatment by hydrogen plasma leads to complete disintegration of silicon crystallites in a film-substrate transition layer (SiC—Si) and degradation of structural perfection of the silicon carbide crystallites in the SiC1.4 layer. SnOx films of thickness of about ~350 nm were obtained by magnetron sputtering deposition on glass substrate in Ar-O2 atmosphere. It is shown that phase composition and structure of SnOх films essentially depend on pressure of Ar-O2 mixture in the chamber within the limits of 1.0–2.7 Pa. Different effect of hydrogen and oxygen plasma on both segregation and disintegration processes of polycrystalline phases in SnOх films is shown. It is obvious that hydrogen plasma influence is spread to all film depths (~200–300 nm), causing silicon crystallites or tin oxide disintegration. A large number of hydrogen plasma ions penetration through a solid film presupposes film material saturation by hydrogen atoms.

Author is very grateful to doctor of science K. Kh. Nusupov, candidate of science D. M. Mukhamedshina and candidate of science K. A. Mit' for assistance in the experiment and Scientific Committee of the Ministry of Education and Science of the Republik of Kazakhstan for the research financing.

keywords Thin films, hydrogen glow discharge plasma, silicon carbide, ion implantation, tin oxide, magnetron sputtering

1. Suzdalev I. P. Nanotechnologiya: fizikokhimiya nanoklasterov, nanostruktur i nanomaterialov (Nanotechnology: Physics and Chemistry of Nanoclusters, Nanostructures and Nanomaterials). Moscow : KomKniga, 2006. 592 p.
2. Yan H., Wang B., Song Х. M. and etc. Diamond and related materials. 2000. No. 9. P. 1795.
3. Sari A. H., Ghorbani S., Dorranian D. and etc. Appl. Surface Sci. 2008. Vol. 255 (5). Pt 1. pp. 2180-2184.
4. Nussupov K. Kh., Beisenkhanov N. B., Tokbakov J. Nucl. Instrum. and Meth. B. 1995. Vol. 103. pp. 161-174.
5. Borders J. A., Picraux S. T., Beezhold W. Appl. Phys. Lett. 1971. Vol. 18 (11). pp. 509-511.
6. Baranova E. K., Demakov K. D., Starinin K. V. and etc. Dokl. AN SSSR. (Reports of Science Academy of USSR) 1971. Vol. 200. pp. 869-870.
7. Nussupov K. Kh., Beisenkhanov N. B., Valitova I. V. and etc. Physics of the Solid State. 2006. Vol. 48 (7). pp. 1255-1267.
8. Nussupov K. Kh., Beisenkhanov N. B., Valitova I. V. and etc. J. of Mater. Sci.: Mater. in Electronics. 2008. Vol. 19, suppl. 1, No. 12. pp. 254-262.
9. Gerasimenko N. N., Kuznetsov O. N., Lezheyko L.V. and etc. Mikroelectronika (Microelectronics) 1974. Vol. 3, No. 5. pp. 467-468.
10. Rembeza S. I., Svistova T. V., Rembeza E. S., Borsyakova O. I. Fizika i tekhnika poluprovodnikov (Physics and Technique of semi-conducters) 2001. No. 35 (7). pp. 796-800.
11. Karapatnitski I. A., Mit K. A., Mukhamedshina D. M., Beisenkhanov N. B. Surface and Coat. Technol. 2002. Vol. 151/152. pp. 76-81.
12. Jiang J. C., Lian K., Meletis E. I. Thin Solid Films. 2002. Vol. 411. pp. 203-210.
13. Mukashev B. N., Tokmoldin S. Zh., Beisenkhanov N. B. and etc. Mater. Sci. Eng. B. 2005. Vol. 118. No. 1-3. pp. 164-169.

Language of full-text english
Full content Buy