N. E. Bauman Moscow State Technical University (Moscow, Russia):

Grishin Yu. M., Professor, Doctor of Engineering Sciences, e-mail: ygrishin@pover.bmstu.ru
Kozlov N. P., Head of Department, Doctor of Engineering Sciences
Skryabin A. S., Assistant Professor, Candidate of Engineering Sciences

“Tsentrkvarts” Enterprise (Moscow, Russia):

Borisov L. A., Deputy Chief Executive Officer – Chief Engineer

This article presents the results of works, which have been earlier started by authors for research of efficiency of obtaining of polycrystalline silicon from its oxides’ parts (quarts and silicon monoxide) in plasma argon-hydrogen flow. The calculation method was developed together with carrying out of theory researches of physical and chemical processes in the main zones of formed high-temperature heterogeneous flow: flow homogenization zone, and channels of gas-chemical reactor and reactor-condenser. There were defined the optimal mode parameters of process and sizes of gas-chemical reactor, where the efficiency of manufacturing of silicon steam is reached on the level of 80-90%. There were defined the specific energetic costs for silicon obtaining, which make up 25-30 kW·hour for 1 kg of silicon. On the basis of the carried out experiments, there was defined the dependence of silicon obtaining efficiency from the processed particles’ coarseness, which can reach 60%. Experimental research of efficiency of silicon obtaining from solid particles of its monoxide has shown that with similar coarseness of processed particles, the output of silicon from silicon monoxide is approximately by 2-2.5 times higher, than from quartz. Obtained results make it possible to do the following operations:
-making a conclusion about the possibility of significant increasing of both output of silicon and its purity with plasma-chemical processing of quartz (or silicon monoxide) due to the usage of extrapure initial reagents and high-power nonelectrode induction plasmatrons;
-prospect development of plasma-chemical technology of obtaining of polycrystalline silicon directly from quartz.
This work was carried out with partial financial support of Russian Foundation for Basic Research (project No. 12-08-31138) and the State Order of Ministry of Education and Science No. 7.3319.2011.

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