National University of Science and Technology MISiS

K. D. Shcherbachev

V. T. Bublik

M. I.Voronova

«Silicon−on−insulator» (SOI) structures irradiated with Ar+ ions with an energy of 100 keV and doses of 2 ⋅ 10¹³ and 4 ⋅ 10¹³ cm⁻² were investigated by high−resolution X−ray diffraction and Rutherford backscattering spectroscopy methods. Such a choice of implantation energy allowed us to set the maximum of projected ions length in the middle of the silicon layer and to minimize possible changes of electric and elastic force fields of the internal dielectric during irradiation. The implantation was accompanied by an irradiation using UV lamp (photoexcitation in situ) with a flux of 25 mW ⋅ cm⁻². It was found that in the case of low doses the photoexcitation leads to cluster formation both near the sample surface and in the area of maximum strain. At the dose of 4 ⋅ 10¹³ cm⁻², when surface amorphization starts, the photoexcitation no longer influenced the redistribution of radiation−induced defects. The photoexcitation favors the sink of interstitial type defects towards the surface.

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