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EPITAXIAL LAYERS AND MULTILAYERED COMPOSITIONS
Название An Experimental Study of the Characteristics of Thyristors, Manufactured on CZ–Si , Under the Action of Gamma–Irradiation
Автор S. V. Bytkin, T. V. Krytskaja, E. G. Radin, V. I. Goncharov, J. I. Kunitskij, S. P. Kobeleva
Информация об авторе

Laboratory of the Thyristor Drive and Radioisotope laboratory of Integrated Iron & Steel Works «Zaporozhstal»

S. V. Bytkin

E. G. Radin

V. I. Goncharov

J. I. Kunitskij

 

Zaporozhye State Engineering Academy

T. V. Krytskaja

 

National University of Science and Technology MISiS

S. P. Kobeleva

Реферат

Studies of test characteristics of the test thyristor structures based on CZ−Si <P, Ge> exposed to gamma irradiation showed a much higher radiation resistance of this device compared with those of the reference structures obtained under similar conditions on single crystals of silicon not doped with germanium.

Ключевые слова Silicon, single crystal, doped with germanium, thyristor, γ−irradiation
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