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MODELING OF PROCESSES AND MATERIALS
Название Investigation of Charge Carriers Space Self–Organization in Strong Electrical Fields
Автор V. S. Kuznetsov, P. A. Kuznetsov
Информация об авторе

Yaroslavl State University

V. S. Kuznetsov

P. A. Kuznetsov

Реферат

An analytical solution of an avalanche current in p—i—n−structures is obtained. The impurity level and a generation−recombination phenomena are taken into consideration. P—i—n–structures current−voltage characteristic is derived. The results explain pattern formation and hysteresis under strong electrical field.

Ключевые слова Avalanche diode, recombination, deep impurities
Библиографический список

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