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MATERIALS SCIENCE AND TECHNOLOGY. SEMICONDUCTORS
ArticleName Investigation on the properties of large [100]−oriented InSb single crystals grown by czohralski method
ArticleAuthor V. S. Ezhlov, A. G. Milvidskaya, E. V. Molodtsova, G. P. Kolchina, M. V. Mezhennyi, V. Ya. Resnick
ArticleAuthorData

OAO Giredmet

V. S. Ezhlov, A. G. Milvidskaya, E. V. Molodtsova, G. P. Kolchina

 

Insitute for Chemical Problems of Microelectronics

M. V. Mezhennyi, V. Ya. Reznik

Abstract

Investigation on the properties of large [100]−oriented InSb single crystals grown by Czoсhralski method The properties of undoped and heavily Te doped large single crystals of InSb grown by Czochralski method in the [100] direction and intended for use in IR photodetectors of new generation were studied. It was found that the non−uniformity in undoped crystals does not exceed 10—16%. The average dislocation density in this ingots was 7 ⋅ 101 cm−2 and their distribution along the diameter of (100)−oriented wafers was much more uniform than for the (211)−oriented wafers. We also studied the microstructure of heavily Te doped InSb crystals. It was established that the dislocation density in these crystals was below 1 ⋅ 102 cm−2. Te doping producing the electron concentration higher than 1,5 ⋅ 1018 cm−3 gave rise to the formation of high density of precipitates. The optical transmission of the samples with electron concentration ~6,9 ⋅ 1017 cm−3 was found to de higher 40 % for the wavelength range of 3—5 μm.

keywords Indium antimonide, monocrystal, Czochralski, defects, optical transmission, uniformity
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