Nikolaev Institute of Inorganic Chemistry (Siberian Branch of Russian Academy of Sciences)

F. A. Kuznetsov, T. P. Smirnova, N. I. Fayner, N. B. Morozova, I. K. Igumenov

This article considers the chemical deposition processes of metallic and dielectric (high−k and low−k) films from the gaseous phase with application of non-traditional starting materials (volatile complex compounds and electromagnetic compounds). There were held the complex researchings of chemical and phase composition and structure of double oxides` films (HfO₂)_1−x(Ме₂O₃)_x (where Ме = Al, Sc), as well as the films of silicon carbonitrides and oxycarbonitrides. The obtained materials have a complex of unique function properties, which makes them prospective for application in microelectronic, nanoelectronic and optoelectronic devices.

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