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MODELING OF PROCESSES AND MATERIALS
Название Phosphorus diffusion in germanium at the InGaP/Ge heterostructure boundary
Автор S. P. Kobeleva, D. A. Kuzmin, S. Yu. Yurchuk, V. N. Murashev, I. M. Anfimov, I. V. Schemerov, V. B. Zhalnin
Информация об авторе S. P. Kobeleva, D. A. Kuzmin, S. Yu. Yurchuk, V. N. Murashev, I. M. Anfimov, I. V. Schemerov, National University of Science and Technology «MISIS»; V. B. Zhalnin, Kvant Research and Production Union.
Реферат

Phosphorus diffusion profiles in germanium have been calculated using different models some of which take into account the effect of multiply charged vacancies and field effects. Diffusion profile calculation results have been compared with the experimental data on the depth of the p—n junction in a single−stage solar cell based on the InGaP/Ge structure. We show that the existing models can be applied to this type of structures for making rough estimates only, whereas more accurate diffusion profile calculations require adapting the diffusion model for specific heterostructure synthesis conditions.
Ключевые слова Phosphorous diffusion in germanium, diffusivity, multicascade solar sells.
Библиографический список

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Language of full-text русский
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