CHOICE OF REACTOR CHAMBER FOR POLYCRYSTALLINE SILICON GROWTH

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MODELING OF PROCESSES AND MATERIALS
Название	CHOICE OF REACTOR CHAMBER FOR POLYCRYSTALLINE SILICON GROWTH
Автор	D.S. Brovin, A.A. Lovtsus and M.E. Rudinsky
Информация об авторе	D.S. Brovin, A.A. Lovtsus and M.E. Rudinsky, Soft–Impact Ltd, Saint–Petersburg State Polytechnical University
Реферат	Polycrystalline silicon is widely used in the modern semiconductor industry. The Siemens process is a dominant technique in «solar» and «electronic» silicon production. The choice of optimal design of the reactor chamber for silicon chlorosilanes reduction by this process remains one of the many unsolved problems. The turbulent submerged jet theory and numerical simulation have been used to analyze these problems. Natural and forced convection controlled reactor operation modes have been discussed.
Ключевые слова	Polycrystalline silicon, Siemens process, numerical simulation, turbulence, heat transfer.
Language of full-text	русский
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