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EPITAXIAL LAYERS AND MULTILAYERED COMPOSITIONS
ArticleName Investigations of quantum well matrix photodetectors under intense optical illumination
ArticleAuthor V. G. Sredin, M. V. Sakharov, V. B. Kulikov, G. K. Vasiliev, B. G. Bravy
ArticleAuthorData V. G. Sredin, M. V. Sakharov, Peter The Great Military Academy of Strategic Rocket Force; V. B. Kulikov, Scientific Research Institute «Polyus» after M. F. Stelmakh, Scientific Innovation Center Of Rocket Space Technology; G. K. Vasiliev, B. G. Bravy, Russian Academia of Science, Chemical Physics Problems Institute.
Abstract
Results of investigations of degradation processes in quantum well matrix photodetectors in intense laser irradiation fields are presented. We show the important role of the connect layer between the photodetector matrix and the Si crystal of the LSI signal processing circuit in these processes.
keywords Infrared semiconductor matrix photodetectors, quantum well structures, laser irradiation.
References
1. Voytsekhovskiy, A. V. Fotoelektricheskie infrakrasnye detektory s upravlyaemoy spektral'noy kharakteristikoy / A. V. Voytsekhovskiy, S. N. Nesmelov // Vestn. Tomskogo gos. un-ta. Seriya «Fizika». - 2005. - T. 285. – S. 164—171.
2. Stafeev, V. I. Matrichnye fotopriemnye ustroystva srednego i dal'nego infrakrasnykh diapazonov na osnove fotodiodov iz CdxHg1-xTe / V. I. Stafeev, K. O. Boltar', I. D. Burlakov, V. M. Akimov, E. A. Klimanov, L. D. Saginov, V. N. Solyakov, N. D. Mansvetov, V. D. Ponomarenko, A. A. Timofeev, A. M. Filachev // FTP. - 2005. - T. 39, № 10. - S. 1257—1265.
3. Kulikov, V. B. CHuvstvitel'nost' dlinnovolnovogo fotopriemnika na osnove struktur s kvantovymi yamami pri komnatnoy temperature / V. B. Kulikov, V. P. Kotov, O. F. Butyagin, O. B. CHerednichenko // Prikladnaya fizika. - 2010. - № 1. - S. 78—80.
4. Voytsekhovskiy, A. V. Model'noe predstavlenie propuskaniya moshchnogo impul'snogo lazernogo IK-izlucheniya v oblasti fundamental'nogo pogloshcheniya v epitaksial'nykh sloyakh CdxHg1-xTe / A. V. Voytsekhovskiy, S. A. SHul'ga, V. G. Sredin, N. KH. Talipov // Izv. vuzov. Fizika. - 2010. - № 9. - S. 53—58.
5. Stafeev, V. I. Eksperimental'noe issledovanie opticheskoy stoykosti matritsy «smotryashchego» tipa na osnove CdxHg1-xTe k vozdeystviyu lazernogo izlucheniya s dlinoy volny 10,6 mkm / V. I. Stafeev, I. D. Burlakov, K. O. Boltar', V. G. Sredin, M. V. Sakharov, S. B. Sukhovey // Izv. vuzov. Materialy elektron. tekhniki. - 2007. - № 2. - S. 31—34.
6. Sredin, V. G. Matematicheskaya model' vozdeystviya lazernogo impul'sa na mnogosloynuyu poluprovodnikovuyu fotochuvstvitel'nuyu strukturu / V. G. Sredin, M. V. Sakharov // Prikladnaya fizika. - 2011. - № 2. - S. 5—10.
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