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MATERIALS SCIENCE AND TECHNOLOGY. SEMICONDUCTORS
ArticleName Rare earth metal diffusion doping of silicon
ArticleAuthor N. V. Latukhina, V. M. Lebedev
ArticleAuthorData N. V. Latukhina, Samara State University; V. M. Lebedev, St. Petersburg B.P. Konstantinov Institute of Nuclear Physics, Russian Academy of Sciences
Abstract
We have studied the properties of silicon diffusion doped with rare earth metals (Dy, Lu, Sm, Gd, Yb, Y, Sc, Ho and Er). Diffusion was from a rare earth metal oxide film on the surface of the silicon wafer. Rare earth metal profiles in silicon surface layers have been studied with Rutherford backscattering and deuteron nuclear reaction spectroscopy. The VC characteristics, surface resistivity and carrier mobility have been measured during stepwise layer etching to determine the hole profiles in the doped silicon layers. We show that the concentration of all the rare earth elements studied in the silicon surface layers is far above the concentration of ionized acceptors.
keywords Silicon, diffusion, doping.
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