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ArticleName The program complex for analysis and calculation of grown-in microdefects formation in dislocation-free silicon single crystals
ArticleAuthor V. I. Talanin, I. E. Talanin, N. Ph. Ustimenko
ArticleAuthorData V. I. Talanin, I. E. Talanin, N. Ph. Ustimenko, Classic Private University, Ukraine
Abstract
A software package has been suggested as a virtual experimental tool for the analysis and calculation of growth microdefect formation in undoped dislocation-free silicon single crystals. This software package allows one to use growth parameters (crystal growth rate, crystal diameter, temperature gradients and cooling rate) for calculating oxygen and carbon precipitation process parameters during post-growth crystal cooling from the growth temperature to room temperature. The software package allows analyzing and calculating the formation of vacancy micropores and interstitial dislocation loops.
keywords Grown-in microdefects, precipitate, vacancy microvoid, interstitial dislocation loop, growth rate, axial temperature gradient.
References

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