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Epitaxial layers and multilayered compositions
ArticleName Study of Electrical Properties of (SiC)1–х(AlN)x/SiC Anizotropic Heterostructures
ArticleAuthor B. A. Bilalov, M. K. Kurbanov, A. A. Gadzhiev, Sh. M. Ramazanov
ArticleAuthorData B. A. Bilalov, A. A. Gadzhiev, (Dagestan State Technical University); M. K. Kurbanov and Sh. M. Ramazanov, (Dagestan State University).
Abstract
p-(SiC)1-x(AlN)x/ /n-6H-SiC have been synthesized by sublimation epitaxy of (SiC)1-x(AlN) semiconductor solid solutions on 6H-SiC substrates. Experimental concentration and temperature functions of the CV curves have been presented. We found that in the presence of high potential barriers direct current is caused by tunneling and carrier recombination through boundary states.
keywords CV curve, tunneling, carriers, heterostructures.
References
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