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Epitaxial layers and multilayered compositions
ArticleName Study of Nuclear Rasiation Detectors Spectra on VPE–GaAs
ArticleAuthor G. I. Koltsov, S. I. Didenko, A. V. Chernykh, S. V. Chernykh, A. V. Sidelev
ArticleAuthorData G. I. Koltsov, e-mail: kgi39@mail.ru, S. I. Didenko, e-mail: sdi13@mail.ru, A. V. Chernykh, S. V. Chernykh, e-mail: chav_84@mail.ru, A. V. Sidelev, (National Research University «MISiS»)
Abstract
Specimens of GaAs detectors with various types of potential barriers have been fabricated. The high resistance working 40–45 μm n-layers with carrier concentrations of less than 1012 cm-3 have been grown by vapor phase epitaxy in a chloride transport system. The research results for the of a α-, β-, γ-source spectra measured by the detectors have been presented, a high quality of the test material for detector applications has been demonstrated and ways of further optimization of detectors on VPE-GaAs have been determined.
keywords Gallium arsenide, АIIIВV, chemical vapor phase deposition, semiconductor detector, nuclear radiation detector, spectra.
References
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