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| MATERIALS SCIENCE AND TECHNOLOGY. DIELECTRICS | |
| ArticleName | Study of microinclusions in shaped sapphire crystals |
| ArticleAuthor | A.V. Borodin, V.A. Borodin, V.E. Iskorostinskaya, T.A. Steriopolo, I.I. Khodos and A.N. Nekrasov |
| ArticleAuthorData | A.V. Borodin, e-mail: borodin@ezan.ac.ru, V.A. Borodin, e-mail: bor@ezan.ac.ru, V.E. Iskorostinskaya, e-mail: kamynina@ezan.ac.ru, T.A. Steriopolo, (FGUP EZAN); I.I. Khodos, e-mail: chodos@iptm.ac.ru, IPTM Rus. Acad. Sci.; A.N. Nekrasov, e-mail: alex@iem.ac.ru, IEM Rus. Acad. Sci |
| Abstract | The paper presents results of chemical and structural analysis of scattering centers in shaped sapphire crystals. The scattering centers (SC) are solid phase inclusions up to 6 microns in size. The congestion of these inclusions can form «strips» and «cords» which considerably worsen the optical quality of the crystals. Microanalysis of the samples has been performed using a CAMEBAX MBX X-ray microanalyzer with a Link AN10/55S energy-dispersive X-ray spectrometer and a JEM-2000 FX electron microscope. The results have shown that the scattering centers are basically amorphous aluminum inclusions. The volume density of SC in the defective sample is 1—2 order above that of the high optical quality reference sample. |
| keywords | Optics, sapphire, defects. |
| References | 1. Bagdasarov, H. S. Sintez krupnyh monokristallov korunda / H. S. Bagdasarov // Rubin i sapfir. - M. : Nauka, 1974.
- P. 20—35. 2. Cockayne, B. The melt growth of ohide and related single crystals / B. Cockayne // J. Cryst. Growth. - 1977. - V. 42, N 1. P. 413—426. 3. Tatarchenko, V. A. Defects in shaped sapphire crystals / V. A. Tatarchenko, T. N. Jalovets, G. A. Satunkin, L. M. Zatulovsky, L. P. Egorov, D. Ja. Kravetsky // Shaped crystal growth. - Amsterdam, 1980. - P. 335—340. 4. Tiller, V. A. Osnovnye polozhenija teorii zatverdevanija / V. A. Tiller // Teorija i praktika vyrawivanija kristallov M. : Metallurgija, 1968. - P. 347—349. 5. Novak, R. E. The production of EFG sapphire ribbon for heteroepitahial silicon substrates / R. E. Novak, R. Metzl, A. Dreeben, S. Berkman // Shaped crystal growth. - Amsterdam, 1980. - P. 143— 150. 6. Jalovec, T. N. Obrazovanie vakansionnyh por pri otzhige profilirovannyh kristallov sapfira / T. N. Jalovec, V. A. Borodin // Izv. AN SSSR. Neorgan. materialy. - 1988. - Vol. 24, N 6. - P. 946—949. 7. Wada, K. Growth and characterization of sapphire ribbon crystals / K. Wada, K. Hoshikawa // Shaped crystal growth. Amsterdam, 1980. - P. 151—159. 8. Nikolaenko, M. V. Gazovye vkljuchenija v monokristallah sapfira vyrawennyh metodom Kiropulosa / M. V. Nikolaenko, Je. V. Es'kov, A. Ju. Ignatov // VI Mezhdunar. konf. -Himija tverdogo tela i sovremennye mikro- i nanotehnologii-. - Kislovodsk ; Stavropol' : SevKavGTU, 2006. - P. 510. 9. Borodin, V. A. Real'naja struktura profilirovannyh kristallah sapfira v svjazi s uslovijami vyrawivanija / V. A. Borodin, T. A. Steriopolo, V. A. Tatarchenko, T. N. Jalovec, L. V. Bondarenko // Izv. AN SSSR. Ser. fiz. - 1985. - Vol. 49, N 12. - P. 2380—2385. |
| Language of full-text | russian |
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