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ArticleName Study of cadmium-zinc-tellurium crystals growing processes and substrates manufacturing on their base
DOI 10.17580/nfm.2016.02.05
ArticleAuthor Grishechkin M. B., Denisov I. A., Silina A. A., Shmatov N. I.

JSC “Giredmet”, Moscow, Russia:

M. B. Grishechkin, Researcher
I. A. Denisov, Head of Laboratory, e-mail:
A. A. Silina, Researcher
N. I. Shmatov, Senior Researcher


Presented are the research results of cadmium-zinc-tellurium crystals no less than 60 mm in diameter growing by vertical Bridgman method (VBM) under conditions of spontaneous melt crystallization at the initial stage of a solid phase formation. It has been established that discontinuity of protective coating on an ampoule internal surface leads to a drop in the single-crystal wafers yield. Use of a glass-carbon tube for eliminating melt contacts with quartz walls of the ampoule has allowed to improve structural perfection of the grown crystals. Defined are the processes realization conditions which can guarantee obtaining of ingots with a volume of monocrystalline area, suitable for manufacturing substrates with the surface orientation parallel to crystallographic planes (111) and (211) no less than 50 mm in diameter with homogeneous distribution of dislocations and of density no more than 8·104 cm–2, without low-angle boundaries. Values of optical transmission coefficient in a spectral range from 2.5 to 20 μm comprise no less than 60%. There was fulfilled an optimization of substrate plates mechanical polishing modes for different choices of polishing pad material with the use of suspensions based on aluminium, ceric and silicon oxides of diverse grain. The best results have been achieved in case of suspensions based on aluminium oxide. Surface roughness of substrate plates, estimated by an arithmetical mean deviation of a profile (Ra) is of the order of 4.5 nm for Al2O3 with a 0.05-μm grain and of 6 nm for Al2O3 with a 0.3-μm grain, while an average scratch depth doesn’t exceed 18 and 40 nm, respectively. Deviation from flatness of profile of substrate plates up to 50 mm in diameter comes to ~0.5 μm after mechanical and the subsequent chemical mechanical polishing. Examination of surface areas of the plates by infrared microscopy has revealed a complete elimination of damages caused by mechanical polishing after stripping of 10–15 μm by chemical mechanical method.

This work was carried out with the financial support of the Ministry of Education and Science of the Russian Federation in the framework of the Agreement on subsidies No. 14.576.21.0055 of October 21, 2014 (Unique identifier: RFMEFI57614X0055).

keywords Cadmium-zinc-tellurium, vertical Bridgman method, spontaneous crystallization, substrate, mechanical polishing

1. Mackenzie J., Kumar F. J., Chen G. Advancements in THM-grown CdZnTe for use as substrates for HgCdTe. Journal of Electronic Materials. 2013. Vol. 42, No. 11. pp. 3129–3132.
2. Rogalski A. Progress in focal plane array technologies. Progress in Quantum Electronics. 2012. Vol. 36. pp. 342–473.
3. Datta A., Swain S., Cui Y., Burger A., Lynn K. Correlation of Bridgman-grown Cd0.9Zn0.1Te properties with different ampoule rotation schemes. Journal of Electronic Materials. 2013. Vol. 42. pp. 3041–3053.
4. Swain S. K., Cui Y., Datta A., Bhaladhare S., Rao M. R., Burger A., Lynn K. G. Bulk growth of uniform and near stoichiometric cadmium telluride. Journal of Crystal Growth. 2014. Vol. 389. pp. 134–138.
5. Su C. H., Lehoczky S. L. Melt growth of high-resistivity CdZnTe crystals by controlling Cd over-pressures. Journal of Crystal Growth. 2011. Vol. 319. pp. 4–7.
6. Zhao J., Chang Y., Badano G., Sivananthan S., Markunas J., Lewis S., Inan J. H., Wijewarnasuriya P. S., Chen Y., Brill G., Dhar N. Correlation of CdZnTe (211)B substrate surface morphology and HgCdTe (211)B epilayer defects. Journal of Electronic Materials. 2004. Vol. 33, No. 8. pp. 881–885.
7. Sheng F., Zhou C., Sun S., Yang J. Influences of Te-rich and Cd-rich precipitates of CdZnTe substrates on the surface defects of HgCdTe liquid-phase epitaxy materials. Journal of Electronic Materials. 2014. Vol. 43, No. 5. pp. 1397–1402.
8. Artemov A. S. Khimiko-mekhanicheskoe polirovanie materialov (Chemical mechanic polishing of materials). Rossiiskie nanotekhnologii = Nanotechnologies in Russia. 2011. Vol. 6, No. 7/8. pp. 54–73.
9. Averechkin P. A., Kalnov V. A., Kozhukhova E. A., Levonovich B. N., Maishev Yu. P., Parkhomenko Yu. N., Shevchuk S. L., Shlenskiy A. A. Sposob polucheniya uglerodsoderzhashchikh pokrytiy (Method of carbonic coatings obtaining). Patent RF, No. 2374358. Asserted 30.04.2008. Published 27.11.2009. Bulletin No. 33.
10. Rudolph P. Fundamental studies on Bridgman growth of CdTe. Progress in Crystal Growth and Characterization of Materials. 1994. Vol. 29, No. 1–4. pp. 275–381.
11. Averechkin P. A., Konovalov A. A., Shlenskiy A. A., Shmatov N. I. Sposob polucheniya poluprovodnikovykh kristallov tipa AIIBVI (Method of the AIIBVI-type semiconductor crystals obtaining). Patent RF, No. 2380461. Asserted 28.10.2008. Published 27.01.2010. Bulletin No. 3.
12. Idenbaum G. V., Baronenkova R. P., Boynykh N. M. Travlenie dislokatsii v monokristallakh CdTe (Etching of dislocations in CdTe monocrystals). Fizika i khimiya obrabotki materialov = Physics and Chemistry of Materials Treatment. 1971. Vol. 2, No. 2. pp. 91–96.
13. Grishechkin M. B., Smirnova N. A., Shmatov N. I. Osobennosti formirovaniya kristallov Cd1–xZnxTe pri vyrashchivanii po metodu Bridzhmena v usloviyakh samoproizvolnoy kristallizatsii rasplava (Features of Cd1–xZnxTe crystals forming when Bridgman-growing under conditions of spontaneous melt crystallization). Tezisy dokladov XIV Natsionalnoy konferentsii po rostu kristallov (Abstracts of reports of XIV National Conference on Crystal Growth). Moscow, Russia. 2010. p. 288.
14. Mezhennyi M. V., Smirnova N. A., Shmatov N. I. Struktura i osobennosti obrazovaniya treshchin v kristallakh Cd1–xZnxTe (x≤0.04)), vyrashchennykh metodom vertikalnoy napravlennoy kristallizatsii (Structure and peculiarities of cracks formation in Cd1–xZnxTe (x≤0.04) crystals, grown by the vertical oriented crystallization method). Izvestiya Vysshikh Uchebnykh Zavedenii. Materialy Elektronnoi Tekhniki = Proceedings of Univer sities. Materials of Electronic Engineering. 2008. No 4. pp. 11–16.

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