Journals →  Materialy Elektronnoi Tekhniki →  2013 →  #3 →  Back

ATOMIC STRUCTURES AND METHODS OF STRUCTURAL INVESTIGATIONS
ArticleName High–Resolution X–ray Diffractometry of Proton Irradiated Silicon
ArticleAuthor I. S. Smirnov, I. G. Dyachkova, E. G. Novoselova
ArticleAuthorData

Moscow Institute of Electronics and Mathematic, Higher School of Economics:

I. S. Smirnov

I. G. Dyachkova

E. G. Novoselova

Abstract

We have studied the transformation of radiation defects generated by proton implantation in n−type silicon crystals with a resistivity of 100 Ohm · cm. The measurements were conducted using high−definition X−ray diffraction (HDD). We show that sequential implantation of protons with energies of 100 + 200 + 300 keV and a fluence of 2 · 1016 sm−2 results in the formation of a damaged layer with an increased lattice parameter and a thickness of 2.4 mm. This layer is formed by radiation−induced defects both of vacancy and interstitial types. Vacuum annealing of the irradiated crystals at 600 °C enlarges the radiation−induced defects while reducing their number. After annealing at 1100 °C interstitial type defects prevail.

keywords Silicon, H+ implantation, annealing, high−definition X−ray difractometry
References

1. Kozlovskii, V. V. Modificirovanie poluprovodnikov puchkami protonov / V. V. Kozlovskii. − S.−Pb. : Nauka, 2003. − 268 s.
2. Zinchuk, O. Formation of insulating oxygen containing layer on the silicon wafer surface using low−temperature hydrogenation / O. Zinchuk, N. Drozdov, A. Fedotov, A. Mazanik, A. Saad, S. Kobeleva, A. Patryn, V. Pilipenko, A. Pushkarchuk // J. Mater. Sci.: Mater. in Electronics − 2008. − V. 19. − P. S273—S276.
3. Gerasimenko, N. N. Radiation defects as nanocrystals in bulk crystalline silicon / N. N. Gerasimenko, V. V. Kozloskii, A. N. Mikhailov // Book of abs. 25th Internat. Conf. on Defects in Semiconductors. − 2009. − P. 250—251.
4. Bouen, D. K. Vysokorazreshayushaya rentgenovskaya difraktometriya i topografiya / D. K. Bouen, B. K. Tanner. − S.−Pb. : Nauka, 2002. − 274 p.
5. Larson, B. C. X−ray diffuse scattering near bragg reflections for the study of clustered defects in crystalline materials / B. C. Larson − Diffuse scattering and the fundamental properties of materials. − N.−Y. (NY) : Momentum Press, 2009.
6. Astahov, V. P. Sozdanie narushennyh sloev v kremnii dlya upravleniya harakteristikami p—i—n−fotodiodov / V. P. Astahov, N. V. Kuznetsov, I. G. Saharova, I. S. Smirnov, G. G. Solov’ev, K. V. Sorokin // Izv. vuzov. Materialy elektron. tehniki − 2001. − N 1. − P. 16—19.
7. Lomov, A. A. Asimtoticheskoe diffuznoe rasseyanie rentgenovskih luchei v monokristallah GaAs, legirovannyh kremniem / A. A. Lomov, V. A. Bushuev, R. M. Imamov, K. Bokki, P. Francozi // Kristallografiya. − 1999 − T. 44, N 4. − P. 674—683.
8. Pan, G. Z. Silicon light emissions from boron implant−induced defect engineering / G. Z. Pan, R. P. Ostroumov, L. P. Ren, Y. G. Lian, K. L. Wang // J. Non−Crystalline Solids. − 2006. − V. 352. − P. 2506—2509.

Language of full-text russian
Full content Buy
Back