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EPITAXIAL LAYERS AND MULTILAYERED COMPOSITIONS
ArticleName Research of Acceptor Impurity Thermal Activation in GaN : Mg Epitaxial Layers
ArticleAuthor A. V. Mazalov, D. R. Sabitov, V. A. Kureshov, A. A. Padalitsa, A. A. Marmalyuk, R. Kh. Akchurin
ArticleAuthorData

Sigm Plus Co.:

A. V. Mazalov

D. R. Sabitov

V. A. Kureshov

A. A. Padalitsa


Moscow State University of Fine Chemical Technologies:

R. Kh. Akchurin

 

Sigm Plus Co., Moscow State University of Fine Chemical Technologies
A. A. Marmalyuk

Abstract

The effect of thermal annealing of GaN:Mg layers on acceptor impurity activation has been investigated. Hole concentration increased and mobility decreased with an increase in thermal annealing temperature. The sample annealed at 1000 oC demonstrated the lowest value of resistivity. Rapid thermal annealing (annealing with high heating speed) considerably improved the efficiency of Mg activation in the GaN layers. The optimum time of annealing at 1000 oC has been determined. The hole concentration increased by up to 4 times compared to specimens after conventional annealing.

keywords Gallium nitride, GaN, MOCVD, Metal−organic chemical vapor deposition, rapid thermal annealing, magnesium bis−cyclopentadienyl, (Cp2Mg), doping, p−type
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