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MATERIALS SCIENCE AND TECHNOLOGY. SEMICONDUCTORS
ArticleName New Hybrid Materiala for Organic Lightemitting Diod Devices
ArticleAuthor R. I. Avetisov, O. B. Petrova, A. A. Akkuzina, A. V. Khomyakov, R. R. Saifutyarov, A. G. Cherednichenko, T. B. Sagalova, N. A. Makarov, I. Ch. Avetissov
ArticleAuthorData

D. I. Mendeleeev Russian University of Chemical Technology, *National University of Science and Technology «MISIS»:

R. I. Avetisov

O. B. Petrova

A. A. Akkuzina

A. V. Khomyakov

R. R. Saifutyarov

A. G. Cherednichenko

T. B. Sagalova
N. A. Makarov

I. Ch. Avetissov

Abstract

We studied regularities of polymorphous transitions in high−purity powder preparations of metal complex of 8−hydroxyquinoline with aluminum, gallium and indium (Meq3, where Me= Al, Ga, In) in the 300−712 K temperature range. According to the results of luminescent and Raman spectra measurements combined with XRD analysis, the general pattern of the polymorphous transitions in all the investigated compounds is β → α→ δ→ γ → ε. Hybrid materials (HM) were synthesized based on borate glass matrix with 0.02–0.1 wt % Meq3. Bulk samples were obtained by melting, and HM thin films were produced by high vacuum deposition. The luminescent properties of the hybrid materials were studied at room temperature. For the bulk HM an increase in the synthesis duration resulted in the shift of the maximum luminescence peak towards short wavelengths relative to that of pure δ(γ)−Meq3 by 40 nm for Alq3, 15 nm for Gaq3, and 10 nm for Inq3.

keywords Metal complex, organic luminophor, polymorphism, hybrid material, electroluminescence
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