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EPITAXIAL LAYERS AND MULTILAYERED COMPOSITIONS
ArticleName Influence of Conditions of Growth on Structural Perfection of Layers of AlN Received by Method MOS−gidridnoy of an Epitaxy
ArticleAuthor A. V. Mazalov, D. R. Sabitov, V. A. Kureshov, A. A. Padalitsa, A. A. Marmalyuk, R. Kh. Akchurin
ArticleAuthorData

Sigm Plus Co.

A. V. Mazalov, D. R. Sabitov, V. A. Kureshov, A. A. Padalitsa

 

Sigm Plus Co.,

Moscow State University of Fine Chemical Technologies
A. A. Marmalyuk

 

Moscow State University of Fine Chemical Technologies

R. Kh. Akchurin

Abstract

In present work the influence of growth conditions on structural quality of AlN layers grown by МОСVD have been investigated. The influence of buffer layers grown with different temperatures and V/III ratio on crystalline quality of AlN were explored. We have reported that the high temperature buffer layer with low V/III ratio is most efficient way to improve the structural quality of AlN. Further improvement was achieved by minimizing the parasitic reactions between NH3 and TMAl. It was carried out by optimization the total flow through the reactor. Applying these methods, it was possible to obtain a high−quality AlN layers (FWHM for (0002), (0004) and (1013) reflections were 50, 97 and 202 arc seconds respectively) with good root−mean−square roughness of surface 0.7 nm.

keywords Aluminium nitride, AlN, MOCVD, Metal−organic chemical vapor deposition, V/III ratio, buffer layer, sapphire, Al2O3
References

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