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PHYSICAL CHARACTERISTICS AND THEIR STUDY
ArticleName X−ray Topographic Study of Defects in Si−based Multilayer Epitaxial Power Devices
ArticleAuthor I. L. Shulpina, V. A. Kozlov
ArticleAuthorData

Ioffe Physico–Technical Institute of Russian Academy of Sciences

I. L. Shulpina

 

FID Technology Ltd., Power Semiconductors Ltd

V. A. Kozlov

Abstract

The defects in silicon based multilayer epitaxial structures intended for power epitaxial−diffusion devices as initial material were studied by x−ray topography techniques. It was shown the dislocation nets with non−uniform distribution of dislocations both over thickness and layer square in the form of dense rows (dislocation walls) or slip bands were principal defects in initial epitaxial layers and have influenced on electrical characteristics of power devices.

keywords Х−ray topography, silicon, defects, multilayer epitaxial structures, power devices, electrical characteristics
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