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MATERIALS SCIENCE AND TECHNOLOGY. SEMICONDUCTORS
ArticleName ZnTe Homogeneity Limits
ArticleAuthor I. Kh. Avetissov, E. N. Mozhevitina, A. V. Khomykov, R. I. Avetissov, A. Yu. Zinovjev
ArticleAuthorData

D. Mendeleyev University of Chemical Technology of Russia

I. Kh. Avetissov, E. N. Mozhevitina, A. V. Khomykov, R. I. Avetissov, A. Yu. Zinovjev

Abstract

The homogeneity limits of ZnTe were examined using direct physical−chemical technique in the temperature range 750—1455 K. It was demonstrated that surface oxidation in the room environment results in the distortion of the observed picture such that an excess of a component may appear with a negative sign. At the same time, in the case of non−oxidized ZnTe, it was demonstrated for the first time the stoichiometrical composition lies within the homogeneity limits. The maximum nonstoichiometries were found to be a 3.4 ⋅ 10−4 and 4.4 ⋅ 10−3 mole excess of a component per mole of ZnTe for Te at 1369 K and Zn at 1292 K, respectively. At T < 1200 K the solidus lines of both the Te− and Zn−rich boundaries demonstrated retrograde behavior. On the basis of the results obtained from X−ray diffraction and optical microscopy measurements performed on quenched samples, a T—x−projection including a wurtzite−sphalerite−like phase transformation was proposed for the Zn—Te−system.

keywords Homogeneity limits
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