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MATERIALS SCIENCE AND TECHNOLOGY. SEMICONDUCTORS
ArticleName Isotopic Effects in Spectra of Electrically Active Impurities in Silicon−28, 29 and 30 with High Isotopic Enrichment
ArticleAuthor T. V. Kotereva, A. V. Gusev, V. A. Gavva, E. A. Kozyrev
ArticleAuthorData

G. G. Devyatykh Institute of Chemistry of High−Purity Substances of the Russian Academy of Sciences, Nizhny Novgorod:

T. V. Kotereva

A. V. Gusev

V. A. Gavva

E. A. Kozyrev

Abstract

Results are reported on an investigation of IR−absorption spectra of shallow donors and acceptors in high−purity single crystals of stable 28Si(99.99%), 29Si(99.92%) and 30Si(99,97%) silicon isotopes grown by zone melting. The content of residual boron, phosphorus and arsenic impurities has been determined in the single crystals with a detection limit of 1 · 1012 at./cm3, 4 · 1011 at./cm3 and 1 · 1012 at./cm3, respectively. IR−spectroscopy results on the content of shallow donors and acceptors are in a good agreement with the data on concentration of uncompensated charge carriers obtained by Hall measurements. The parameters of absorption lines for the boron and phosphorus impurities in the single crystals of silicon isotopes have been studied. We show that a change in the isotopic composition of silicon leads to a shift in the energy spectrum of shallow impurity centers towards the high−energy range with an increase in the atomic mass of the isotope.

keywords Silicon, stable isotopes, single crystals, IR−absorption spectra, electro−active impurities
References

1. Devyatykh, G. G. Vysokochistyy monokristallicheskiy monoizotopnyy kremniy−28 dlya utochneniya chisla Avogadro / G. G. Devyatykh, A. D. Bulanov, A. V. Gusev, I. D. Kovalev, V. A. Krylov, A. M. Potapov, P. G. Sennikov, S. A. Adamchik, V. A. Gavva, A. P. Kotkov, M. F. Churbanov, E. M. Dianov, A. K. Kaliteevskiy, O. N. Godisov, Kh.−Y. Pol', P. Bekker, Kh. Riman, N. V. Abrosimov // DAN. − 2008. − T. 421, № 1. − S. 61—64.
2. Gusev, A. V. Poluchenie monokristallicheskogo monoizotopnogo kremniya−29 / A. V. Gusev, V. A. Gavva, E. A. Kozyrev, A. M. Potapov, V. G. Plotnichenko //Neorgan. materialy. − 2011. − T. 47, № 7. − S. 773—776.
3. Cardona, M. Isotope effects on the optical spectra of semiconductors / M. Cardona, M. L. Thewalt // Rev. of Modern Phys. − 2005. − N 77. − P. 1173—1224.
4. Karaiskaj, D. Dependence of the ionization energy of shallow donors and acceptors in silicon on the host isotopic mass / D. Karaiskaj, T. A. Meyer, M. L. W. Thewalt, M. Cardona // Phys. Rev. B. − 2003. − V. 68, N 7. − P. 121201−1−4.
5. Steger, M. Shallow impurity absorption spectroscopy in isotopically enriched silicon / M. Steger, A. Yang, D. Karaiskaj, M. L. W. Thewalt, E. E. Haller, J. W. Ager III, M. Cardona, H. Riemann, N. V. Abrosimov, A. V. Gusev, A. D. Bulanov, A. K. Kaliteevskii, O. N. Godisov, P. Becker, H.−J. Pohl. // Ibid. − 2009. − V. 79. − P. 205210−1−7.
6. Kovalev, I. D. Izmerenie izotopnogo sostava izotopno−obogashchennogo kremniya i ego letuchikh soedineniy metodom lazernoy mass−spektrometrii / I. D. Kovalev, A. M. Potapov, A. D. Bulanov // Mass−spektrometriya. − 2004. − T. 1, № 1. − S. 37—44.
7. Baber, S. Ch. Net and total shallow impurity analysis of silicon by low temperature fourier transform infrared spectroscopy / S. Ch. Baber // Thin solid films. − 1980. − V. 72, Iss. 1. − P. 201—210.
8. Kolbesen, B. O. Simultaneous determination of the total content of boron and phosphorus in high−resistivity silicon by IR spectroscopy at low temperature / B. O. Kolbesen // Appl. Phys. Lett. − 1975. − V. 27. − P. 353—355.
9. Lewis, R. A. Spectroscopic and piezospectroscopic studies of the energy states of boron in silicon / R. A. Lewis, P. Fisher, N. A. McLean // Australian J. Physics. − 1994. − V. 47. − P. 329—360.
10. Zakel, S. Infrared spectrometric measurement of impurities in highly enriched `Si28` / S. Zakel, S. Wundrack, H. Niemann, O. Rienitz, D. Schiel // Metrologia. − 2011. − V. 48. − P. 14—19.
11. ASTM Designation: F 1630−00 Standard test method for low temperature FT−IR analysis of single crystal silicon for III−V impurities. − P. 1—7.

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