Журналы →
Materialy Elektronnoi Tekhniki →
2010 →
№1
Журналы →
Materialy Elektronnoi Tekhniki →
2010 →
№1
Materialy Elektronnoi Tekhniki
| MATERIALS SCIENCE AND TECHNOLOGY. SEMICONDUCTORS | |
| Название | SIMULATION OF COALESCENCE OF PRIMARY GROWTH DEFECTS IN DISLOCATION-FREE SILICON SINGLE CRYSTALS |
| Авторы | V.I. Talanin, I.E. Talanin, A.I. Mazurskii and M.L. Maksimchuk, |
| Информация об авторах | V.I. Talanin, I.E. Talanin, A.I. Mazurskii and M.L. Maksimchuk, Classical Private University, Ukraine |
| Название | EFFECT OF REACTANT INTRODUCTION PARAMETERS ON SILICON ROD TEMPERATURE IN SIEMENS PROCESS |
| Авторы | V.A. Gavrilov, P.M. Gavrilov and P.P. Turchin |
| Информация об авторах | V.A. Gavrilov, P.M. Gavrilov, FGUP Mining and Chemical Factory, P.P. Turchin, FGOU VPO Siberian Federal university |
| MATERIALS SCIENCE AND TECHNOLOGY. DIELECTRICS | |
| Название | EFFECT OF GROWTH CONDITIONS ON THE OPTICAL TRANSMISSION SPECTRA AND ELECTROPHYSICAL PROPERTIES OF LANTHANUM– GALLIUM SILICATE FAMILY CRYSTALS |
| Авторы | O.A. Buzanov, N.S. Kozlova, E.V. Zabelina, A.P. Kozlova and N.A. Siminel |
| Информация об авторах | O.A. Buzanov, OAO Fomos Materials; N.S. Kozlova, E.V. Zabelina, A.P. Kozlova and N.A. Siminel, (Federal State Educational Institution for Higher Professional Education ‘National University of Science and Technology “MISiS”’) |
| Название | PARAMETERS OF ACTIVATION PROCESSES IN DIAMOND, SILICON AND GERMANIUM |
| Автор | M.N. Magomedov |
| Информация об авторе | M.N. Magomedov, Institute for Geothermal Problems, Dagestan Research Center, Russian Academy of Sciences |
| MODELING OF PROCESSES AND MATERIALS | |
| Название | CHOICE OF REACTOR CHAMBER FOR POLYCRYSTALLINE SILICON GROWTH |
| Авторы | D.S. Brovin, A.A. Lovtsus and M.E. Rudinsky |
| Информация об авторах | D.S. Brovin, A.A. Lovtsus and M.E. Rudinsky, Soft–Impact Ltd, Saint–Petersburg State Polytechnical University |
| Название | SIMULATION OF AMORPHOUS AND CRYSTALLINE DIAMOND–LIKE FILM FORMATION PROCESSES |
| Авторы | B. M. Sinelnikov, V. A. Tarala |
| Информация об авторах | B. M. Sinelnikov, V. A. Tarala, North–Caucasus State Technical University, South Scientific Center of the Russian Academy of Sciences, laboratory of Nanochemistry and Nanotechnology |
| NANOMATERIALS AND NANOTECHNOLOGY | |
| Название | SURFACE STRUCTURE OF SILICON/CARBON MATRIX NANOCOMPOSITES AS REVEALED BY SCANNING PROBE MICROSCOPY |
| Авторы | M.D. Malinkovich, Yu.N. Parkhomenko, D.S. Polyakov and M.L. Shupegin |
| Информация об авторах | M.D. Malinkovich, Yu.N. Parkhomenko, D.S. Polyakov and M.L. Shupegin, Federal State Educational Institution for Higher Professional Education ‘National University of Science and Technology “MISiS”’ |
| Название | ESTIMATING ANALYSIS OF CONDITIONS FOR DEFECT–FREE QUANTUM DOTS FORMATION IN InxGa1–xAs/GaAs HETEROSTRUCTURES |
| Авторы | R.Kh. Akchurin, N.T. Vagapova |
| Информация об авторах | R.Kh. Akchurin, N.T. Vagapova, Moscow State Academy of Fine Chemical Technology |
| PHYSICAL CHARACTERISTICS AND THEIR STUDY | |
| Название | STRUCTURAL INVESTIGATIONS OF MULTICRYSTALLINE SILICON FOR SOLAR CELLS: GRAIN SIZE MEASUREMENT PROBLEM |
| Автор | A.V. Prykhodko |
| Информация об авторе | A.V. Prykhodko, Zaporozhye National University |
| Название | HEAT–SENSITIVE PROPERTIES OF PbA0,5Nb0,5O3 (A = Fe, In, Co, Mn) FERROELECTRICS |
| Авторы | V.N. Tsigankov, V.V. Safonov, E.V. Savinkina and I.A. Zamilatskov |
| Информация об авторах | V.N. Tsigankov, V.V. Safonov, E.V. Savinkina and I.A. Zamilatskov, M.V. Lomonosov Moscow State Academy of Fine Chemical Technology |
| ATOMIC STRUCTURES AND METHODS OF STRUCTURAL INVESTIGATIONS | |
| Название | EFFECT OF GROWTH CONDITIONS OF Bi2Te2,7Se0,3 SOLID SOLUTIONS ON THE ANISOTROPY OF THEIR PHYSICAL PROPERTIES |
| Авторы | V.T. Bublik, A.I. Voronin, E.A. Bygovskaya, V.F. Ponomarev, N.Yu. Tabachkova and O.V. Toropova |
| Информация об авторах | A.I. Voronin, V.F. Ponomarev, (Kristall Research and Production Company Ltd.); N.Yu. Tabachkova, V.T. Bublik, E.A. Bygovskaya and O.V. Toropova, (Federal State Educational Institution for Higher Professional Education ‘National University of Science and Technology “MISiS”’) |
| Название | FABRICATION OF SINGLE–CRYSTAL ORIENTED SUBMICRON STRUCTURES FROM BI AND Bi—Sb FILMS ON SiO2/Si SUBSTRATE |
| Авторы | A.I. Il’in, A.V. Chernykh and C.V. Dubonos |
| Информация об авторах | A.I. Il’in, A.V. Chernykh and C.V. Dubonos, Institute of Microelectronics Technology & High Purity Materials, Russian Academy of Sciences |
